BCP53_13 datasheet(12/22 Pages) NXP

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BCP53_BCX53_BC53PA

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Product data sheet

Rev. 9 — 19 October 2011

12 of 22

NXP Semiconductors

BCP53; BCX53; BC53PA

80 V, 1 A PNP medium power transistors

Characteristics

[1]

Pulse test: tp  300 s;  = 0.02.

FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2

Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

006aac687

102

103

Zth(j-a)

(K/W)

10–1

10–5

10–2

10–4

102

10–1

tp (s)

10–3

103

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 30 V; IE =0A

100

VCB = 30 V; IE =0A;

Tj = 150 C

10

A

IEBO

emitter-base cut-off

current

VEB = 5V; IC =0A

100

hFE

DC current gain

VCE = 2V

IC = 5mA

IC = 150 mA

250

IC = 500 mA

[1] 40

DC current gain

VCE = 2V

hFE selection -10

IC = 150 mA

160

hFE selection -16

IC = 150 mA

100

250

VCEsat

collector-emitter

saturation voltage

IC = 500 mA;

IB = 50 mA

[1] --

0.5

VBE

base-emitter voltage

VCE = 2V; IC = 500 mA [1] --

1V

collector capacitance

VCB = 10 V; IE =ie =0A;

f=1MHz

-15

transition frequency

VCE = 5V; IC = 50 mA;

f=100MHz

145

MHz

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