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STP4N62K3 Datasheet(PDF) 8 Page - STMicroelectronics

No. de pieza STP4N62K3
Descripción Electrónicos  N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET
PDF  19 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4N62K3 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
8/19
Doc ID 17548 Rev 4
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Maximum avalanche energy vs
starting Tj
Figure 17.
Normalized BVDSS vs temperature
Figure 18.
Source-drain diode forward
characteristics
VGS(th)
1.00
0.90
0.80
0.70
-75
TJ(°C)
(norm)
-25
1.10
75
25
125
ID = 50 µA
AM07181v1
RDS(on)
2.0
1.5
1.0
0.5
-75
TJ(°C)
(norm)
-25
25
75
125
2.5
VGS = 10 V
ID = 1.9 A
AM07182v1
EAS
0
40
TJ(°C)
(mJ)
20
100
60
80
0
10
20
30
40
120 140
50
60
70
80
100
110
120
ID=3.8 A
VDD=50 V
90
AM07184v1
BVDSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.90
0.95
1.00
1.05
1.10
ID = 1 mA
AM07183v1
VSD
0
2
ISD(A)
(V)
1
5
3
4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
TJ=25°C
TJ=150°C
TJ=-50°C
0.8
0.9
1.0
AM08888v1



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