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STB155N3LH6 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB155N3LH6
Descripción Electrónicos  N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET
PDF  18 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB155N3LH6 Datasheet(HTML) 3 Page - STMicroelectronics

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STB155N3LH6, STD155N3LH6
Electrical ratings
Doc ID 17893 Rev 3
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Limited by wire bonding.
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
80
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
110
W
Tstg
Storage temperature
-55 to 175
°C
Tj
Operating junction temperature
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
D2PAK
DPAK
Rthj-case
Thermal resistance junction-case max
1.36
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch2 OZ Cu board.
Thermal resistance junction-pcb max
35
50
°C/W
Table 4.
Thermal resistance
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current
40
A
EAS
(1)
1.
Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Single pulse avalanche energy
525
mJ



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