STM8S003F3U6 datasheet(85/100 Pages) STMICROELECTRONICS

85 / 100 page

3. End point correlation line

ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer

curves.

EO = Offset error: deviation between the first actual transition and the first ideal one.

EG = Gain error: deviation between the last ideal transition and the last actual one.

ED = Differential linearity error: maximum deviation between actual steps and the ideal

one.

EL = Integral linearity error: maximum deviation between any actual transition and the end

point correlation line.

Figure 43: Typical application with ADC

STM8

10-bit A/D

conversion

RAIN

CAIN

VAIN

AINx

VDD

0.6 V

± 1 µA

CADC

EMC characteristics

9.3.11

Susceptibility tests are performed on a sample basis during product characterization.

Functional EMS (electromagnetic susceptibility)

9.3.11.1

While executing a simple application (toggling 2 LEDs through I/O ports), the product is

stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).

• FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of

the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2

standard.

• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with

the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the table

below based on the EMS levels and classes defined in application note AN1709 (EMC design

guide for STMicrocontrollers).

Designing hardened software to avoid noise problems

9.3.11.2

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

85/100

DocID018576 Rev 3

Electrical characteristics

STM8S003K3 STM8S003F3

STM8S003F3U6 Datasheet(PDF) 85 Page - STMicroelectronics

STM8S003F3U6 Datasheet(HTML) 85 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100

Datasheet Descarga

Enlace URL