IXTH16P60P datasheet(1/5 Pages) IXYS

No. de pieza	IXTH16P60P

Descripción Electrónicos	Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode

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Fabricante Electrónico	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 600

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 600

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 16

A

I

DM

T

C = 25°C, pulse width limited by TJM

- 48

A

I

AR

T

C = 25°C

- 16

A

E

AS

T

C = 25°C

2.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

460

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

5

g

TO-247

6

g

DS99988(5/08)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 600

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.5

- 4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

- 25

μA

V

GS = 0V

T

J = 125°C

- 200

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

720 m

Ω

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTH16P60P

IXTT16P60P

V

DSS

= - 600V

I

D25

= - 16A

R

DS(on) ≤

≤≤≤≤

720m

Ω

Preliminary Technical Information

Features:

International standard packages

Avalanche Rated

Rugged PolarPTM process

Low package inductance

- easy to drive and to protect

Applications:

High side switching

Push-pull amplifiers

DC Choppers

Current regulators

Automatic test equipment

Advantages:

Low gate charge results in simple

drive requirement

High power density

Fast switching

Easy to parallel

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-247 (IXTH)

G

D

S

D (TAB)

TO-268 (IXTT)

G

S

D (TAB)

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