IXTP86N20T datasheet(2/6 Pages) IXYS

2 / 6 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 86N20T

IXTP 86N20T

IXTQ 86N20T

Symbol

Test Conditions

Characteristic Values

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

DS= 10 V; ID = 0.5 ID25, Note 1

iss

4500

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

550

rss

d(on)

n s

GS = 15 V, VDS = 0.5 VDSS, ID = 43 A

n s

d(off)

G = 3.3 Ω (External)

n s

g(on)

GS= 10 V, VDS = 0.5 VDSS , ID = 25 A

thJC

0.31

°C/W

thCS

TO-220

0.50

°C/W

TO-3P

0.25

°C /W

Source-Drain Diode

Characteristic Values

J = 25°C unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

GS = 0 V

Repetitive

260

F = IS, VGS = 0 V, Note 1

1.5

F =25A, -di/dt = 100 A/μs

140

n s

R = 100V, VGS = 0 V

Note 1: Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %;

*: Current may be limited by externalterminal currnet limit.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2

7,071,537

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