IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA76N25T IXTH76N25T

IXTI76N25T IXTP76N25T IXTQ76N25T

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

43

72

S

C

iss

4500

pF

C

oss

V

480

pF

C

rss

46

pF

t

d(on)

22

ns

t

r

25

ns

t

d(off)

56

ns

t

f

29

ns

Q

g(on)

92

nC

Q

gs

V

28

nC

Q

gd

21

nC

R

thJC

0.27

°C /W

R

thCH

TO-220

0.50

°C W

TO-3P, TO-247

0.21

°C W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

76

A

I

SM

Repetitive, pulse width limited by T

JM

200

A

V

SD

I

1.5

V

t

rr

148

ns

I

RM

21

A

Q

RM

1.6

μC

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

G

= 3.3

Ω (External)

I

V