MCP87090 datasheet(2/18 Pages) MICROCHIP

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MCP87090

DS22332A-page 2

 2013 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VDS.......................................................................+25V

VGS........................................................... +10.0V / -8V

ID, Continuous ..............................................................

8L 5x6-PDFN ............................. 64A, TC = +25°C

8L 3.3x3.3-PDFN ....................... 48A, TC = +25°C

PD.................................................................................

8L 5x6-PDFN ........................... 2.2W, TA = +25°C

8L 3.3x3.3-PDFN ..................... 1.8W, TA = +25°C

TJ, TSTG..............................................-55°C to +150°C

EAS Avalanche Energy .................................... 84.5 mJ

ID =13A, L= 1mH, RG =25Ω

† Notice:

Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated

the

operational

sections

this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

Unless otherwise indicated, TA = +25°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Static Characteristics

Drain-to-Source

Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250 µA

Drain-to-Source Leakage Current

IDSS

——

µA

VGS = 0V, VDS = 20V

Gate-to-Source Leakage Current

IGSS

——

100

VDS = 0V, VGS = 10V/-8V

Gate-to-Source Threshold Voltage

VGS(TH)

1.1

1.35

1.7

VDS = VGS, ID = 250 µA

Drain-to-Source On Resistance

RDS(ON)

—10



VGS = 4.5V, ID = 17A

—

8.5

10.5



VGS = 10V, ID = 17A

Transconductance

gfs

—62—

VDS = 12.5V, ID = 17A

Dynamic Characteristics

Input Capacitance

CISS

—580

—

VGS = 0V, VDS = 12.5V, f = 1 MHz

Output Capacitance

COSS

—265

—

VGS = 0V, VDS = 12.5V, f = 1 MHz

Reverse Transfer Capacitance

CRSS

—70—

VGS = 0V, VDS = 12.5V, f = 1 MHz

Total Gate Charge

—7.5

VDS = 12.5V, ID = 17A, VGS = 4.5V

Gate-to-Drain Charge

QGD

—2.8

—

VDS = 12.5V, ID = 17A

Gate-to-Source Charge

QGS

—1.2

—

VDS = 12.5V, ID = 17A

Gate Charge at VGS(TH)

QG(TH)

—0.8

—

VDS = 12.5V, ID = 17A

Output Charge

QOSS

—5

—

VDS = 12.5V, VGS = 0

Turn-On Delay Time

td(on)

—2.5

—

VDS = 12.5V, VGS = 4.5V,

ID = 17A, RG = 2

Rise Time

—9.3

—

VDS = 12.5V, VGS = 4.5V,

ID = 17A, RG = 2

Turn-Off Delay Time

td(off)

—5.3

—

VDS = 12.5V, VGS = 4.5V,

ID = 17A, RG = 2

Fall Time

—2.9

—

VDS = 12.5V, VGS = 4.5V,

ID = 17A, RG = 2

Series Gate Resistance

—1.8

—



Diode Characteristics

Diode Forward Voltage

VFD

—0.8

IS = 17A, VGS = 0V

Reverse Recovery Charge

QRR

—11

—

IS = 17A, di/dt = 300 A/µs

Reverse Recovery Time

trr

—

11.5

—

IS = 17A, di/dt = 300 A/µs

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