AM50P02-16D datasheet(1/3 Pages) ANALOGPOWER

No. de pieza	AM50P02-16D

Descripción Electrónicos	P-Channel 20-V (D-S) MOSFET

PDF	3 Pages

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Fabricante Electrónico	ANALOGPOWER [Analog Power]

Página de inicio	http://www.analogpowerinc.com/index.html

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AM50P02-16D

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM50P02-16_A

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m(Ω)ID (A)

18 @ VGS = -4.5V

44

28 @ VGS = -2.5V

35

PRODUCT SUMMARY

-20

P-Channel 20-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol Maximum Units

VDS

-20

VGS

±8

Continuous Drain Current

a

TA=25

oC ID

46

IDM

±40

IS

-30

A

Power Dissipation

a

TA=25

oC PD

50

W

TJ, Tstg -55 to 175

oC

Operating Junction and Storage Temperature Range

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

A

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

RθJA

50

oC/W

Maximum Junction-to-Case

RθJC

3.0

oC/W

THERMAL RESISTANCE RATINGS

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AM50P02-16D Datasheet(PDF) 1 Page - Analog Power

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