1

AM4530CE

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4530CE_A

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

4.2

5.3

-4.2

-5.2

30

PRODUCT SUMMARY

-30

P & N-Channel 32-V (D-S) MOSFET

•Low r

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol N-Channel P-Channel Units

30

-30

±20

±20

5.3

-5.2

-4.1

20

-20

1.3

-1.3

A

2.1

2.1

1.3

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

-55 to 150

Symbol

Maximum Units

t <= 10 sec

62.5

Steady-State

110

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

ESD Protected

2000V

D

2

P-Channel MOSFET

D

1

G

1

N-Channel MOSFET

S

1

G

1

S

2

G

2

1

2

3

4

SOIC-8

Top View

D

1

D

1

D

2

D

2

8

7

6

5

S

1

G

2

S

2