MMDF4N01HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

2.0

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 12 Vdc, VGS = 0 Vdc)

(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Temperature Coefficient (Negative)

VGS(th)

0.6

—

0.8

2.8

1.1

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 2.7 Vdc, ID = 2.0 Adc)

RDS(on)

—

—

0.035

0.043

0.045

0.055

Ohm

Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)

gFS

3.0

6.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

425

595

pF

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

270

378

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

115

230

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

td(on)

—

13

26

ns

Rise Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

tr

—

60

120

Turn–Off Delay Time

VGS = 2.7 Vdc,

RG = 2.3 Ω)

td(off)

—

20

40

Fall Time

G = 2.3 Ω)

tf

—

29

58

Turn–On Delay Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

td(on)

—

10

20

Rise Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

tr

—

42

84

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 2.3 Ω)

td(off)

—

24

48

Fall Time

G = 2.3 Ω)

tf

—

28

56

Gate Charge

(See Figure 8)

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

QT

—

9.2

13

nC

(See Figure 8)

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

Q1

—

1.3

—

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

Q2

—

3.5

—

Q3

—

3.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.95

0.78

1.1

—

Vdc

Reverse Recovery Time

(IS = 4.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

38

—

ns

Reverse Recovery Time

(IS = 4.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

38

—

ns

(IS = 4.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

17

—

(IS = 4.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

22

—

Reverse Recovery Stored Charge

QRR

—

0.028

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.