Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

MGSF3442VT1 Datasheet(PDF) 1 Page - Motorola, Inc

No. de pieza MGSF3442VT1
Descripción Electrónicos  N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  MOTOROLA [Motorola, Inc]
Página de inicio  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MGSF3442VT1 Datasheet(HTML) 1 Page - Motorola, Inc

  MGSF3442VT1 Datasheet HTML 1Page - Motorola, Inc MGSF3442VT1 Datasheet HTML 2Page - Motorola, Inc MGSF3442VT1 Datasheet HTML 3Page - Motorola, Inc MGSF3442VT1 Datasheet HTML 4Page - Motorola, Inc MGSF3442VT1 Datasheet HTML 5Page - Motorola, Inc MGSF3442VT1 Datasheet HTML 6Page - Motorola, Inc  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Preliminary Information
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine
™ Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP 6 Surface Mount Package Saves Board Space
• Visit our Web Site at http://www.mot–sps.com/ospd
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 8.0
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
ID
IDM
4.0
20
A
Total Power Dissipation @ TA = 25°C Mounted on FR4 t  5 sec
PD
2.0
W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL
260
°C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3442VT1
7
″
8 mm embossed tape
3000
MGSF3442VT3
13
″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGSF3442VT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 318G–02, Style 1
TSOP 6 PLASTIC
MGSF3442VT1
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 58 mΩ (TYP)
Motorola Preferred Device
™
D
D
D
G
D
S
DRAIN
3
GATE
SOURCE
4
6
5
2
1
© Motorola, Inc. 1997
™


Número de pieza similar - MGSF3442VT1

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
ON Semiconductor
MGSF3442VT1 ONSEMI-MGSF3442VT1 Datasheet
175Kb / 8P
N?묬hannel Power MOSFET
Sep, 2004 ??Rev. XXX
More results

Descripción similar - MGSF3442VT1

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Motorola, Inc
MGSF1N02ELT1 MOTOROLA-MGSF1N02ELT1 Datasheet
116Kb / 5P
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N02LT1 MOTOROLA-MGSF1N02LT1 Datasheet
187Kb / 6P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N03LT1 MOTOROLA-MGSF1N03LT1 Datasheet
183Kb / 6P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF3442XT1 MOTOROLA-MGSF3442XT1 Datasheet
86Kb / 4P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF3454VT1 MOTOROLA-MGSF3454VT1 Datasheet
125Kb / 6P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF3454XT1 MOTOROLA-MGSF3454XT1 Datasheet
138Kb / 6P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0201N MOTOROLA-MMBF0201N Datasheet
178Kb / 6P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0202PLT1 MOTOROLA-MMBF0202PLT1 Datasheet
190Kb / 6P
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF2201NT1 MOTOROLA-MMBF2201NT1 Datasheet
142Kb / 6P
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF2202PT1 MOTOROLA-MMBF2202PT1 Datasheet
179Kb / 6P
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
More results


Html Pages

1 2 3 4 5 6


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com