476KXM050M datasheet(2/11 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF6VP11KHR6

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Drain--Source Breakdown Voltage

(ID = 300 mA, VGS =0 Vdc)

V(BR)DSS

110

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

100

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID = 1600 μAdc)

VGS(th)

1.63

Vdc

Gate Quiescent Voltage (2)

(VDD =50 Vdc, ID = 150 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.2

3.5

Vdc

Drain--Source On--Voltage (1)

(VGS =10 Vdc, ID =4 Adc)

VDS(on)

—

0.28

—

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

3.3

—

Output Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

147

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

506

—

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz,

100 μsec Pulse Width, 20% Duty Cycle

Power Gain

Gps

Drain Efficiency

ηD

—

Input Return Loss

IRL

—

--16

--9

1. Each side of device measured separately.

2. Measurement made with device in push--pull configuration.

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