MRF6VP11KHR6

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed primarily for pulsed wideband applications with frequencies up to

150 MHz. Device is unmatched and is suitable for use in industrial, medical

and scientific applications.

Duty Cycle = 20%

Power Gain — 26 dB

Drain Efficiency — 71%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak

Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• CW Operation Capability with Adequate Cooling

• Integrated ESD Protection

• Designed for Push--Pull Operation

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +110

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Storage Temperature Range

-- 65 to +150

°C

Case Operating Temperature

150

°C

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

Case Temperature 67°C, 1000 W CW, 100 MHz

0.03

0.13

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF6VP11KH

Rev. 7, 4/2010

Freescale Semiconductor

Technical Data

MRF6VP11KHR6

CASE 375D--05, STYLE 1

NI--1230

1.8--150 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFET

PART IS PUSH--PULL

(Top View)

31

Figure 1. Pin Connections

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