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ZXGD3104 Datasheet(PDF) 11 Page - Diodes Incorporated

No. de pieza ZXGD3104
Descripción Electrónicos  SYNCHRONOUS MOSFET CONTROLLER IN SO8
PDF  13 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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ZXGD3104 Datasheet(HTML) 11 Page - Diodes Incorporated

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ZXGD3104N8
Document Number DS35546 Rev. 1 – 2
11 of 13
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3104N8
Design considerations
It is advisable to decouple the ZXGD3104 closely to VCC and ground due to the possibility of high peak gate currents
with a 1
μF X7R type ceramic capacitor C1 as shown in Figure 2. Also the ground return loop should be as short as
possible.
To minimize parasitic inductance-induced premature turn-off of the synchronous controller always keep the PCB
track length between ZXGD3104’s Drain input and MOSFET’s Drain to less than 10mm. Low internal inductance
SMD MOSFET packages are also recommended for high switching frequency power conversion to minimize
MOSFET body diode conduction loss.
The Gate pins should be as close to the MOSFET’s gate as possible. External gate resistors are optional. They can
be inserted to control the rise and fall time which may help with EMI issues.
The careful selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value
for resistor RREF and RBIAS from Table 1 based on the desired Vcc value. This provides the typical ZXGD3104’s
detection threshold voltage of -10mV.
Table 1. Recommended resistor values for various supply voltages
VCC
RBIAS
RREF
5V
1.6
k
Ω
2
k
Ω
10V
3.3
k
Ω
4.3
k
Ω
12V
3.9
k
Ω
5.1
k
Ω
15V
5.1
k
Ω
6.8
k
Ω
19V
6.3
k
Ω
8.5
k
Ω



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