UTT4407G-S08-R datasheet(3/4 Pages) UTC

No. de pieza	UTT4407G-S08-R

Descripción Electrónicos	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UTT4407

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-554.a

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

TA = 25°C

-12

Continuous(Note 2)

TA = 70°C

-10

Drain Current

Pulsed (Note 3)

IDM

-60

TA = 25°C

Power Dissipation (Note 2)

TA = 70°C

2.1

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+ 150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on 1in

2 FR-4 board with 2oz. Copper, t = 10sec.

3. Repetitive rating, pulse width limited by junction temperature.

THERMAL CHARACTERISTICS (TA = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note )

θJA

°C/W

Note: Device mounted on 1in

2 FR-4 board with 2oz. Copper, t = 10sec.

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