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UTT80P06 Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UTT80P06
Descripción Electrónicos  80A, 60V P-CHANNEL POWER MOSFET
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT80P06 Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT80P06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-672.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
TC=25°C
ID
-80
A
TC=100°C
-64
A
Pulsed
TC=25°C
IDM
-320
A
Avalanche Energy
Single Pulsed
EAS
823
mJ
Repetitive
EAR
34
mJ
Power Dissipation
TC=25°C
PD
313
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
0.4
°C/W
Junction to Ambient
θJA
62
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-60
V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V, TJ=25°C
-0.1
-1
µA
VDS=-60V, TC=150°C
-10
-100
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-5.5mA
-2.1
-3
-4
V
Static Drain-Source On-State Resistance
RDS(ON)
ID=-64A, VGS=-10V
0.021 0.023
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
4026 5033
pF
Output Capacitance
COSS
1252 1565
pF
Reverse Transfer Capacitance
CRSS
437
546
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=-48V, ID=-80A, VGS= -10V
115
173
nC
Gate to Source Charge
QGS
VDD=-48V, ID=-80A
27.4
41
nC
Gate to Drain Charge
QGD
50
75
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, ID=-64A, RG=1Ω,
VGS=-10V
24
36
ns
Rise Time
tR
18
27
ns
Turn-OFF Delay Time
tD(OFF)
56
84
ns
Fall-Time
tF
30
45
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TC=25°C
-80
A
Maximum Body-Diode Pulsed Current
ISM
TC=25°C
-320
A
Drain-Source Diode Forward Voltage
VSD
IF=-80A, VGS=0V
-1.2
-1.6
V



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