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UT3404L-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UT3404L-AE3-R
Descripción Electrónicos  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3404L-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT3404
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-146.D
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
5.8
A
Pulsed Drain Current (Note 1, 2)
IDM
20
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
℃
Strong Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
85
125
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
1.9
3
V
On State Drain Current
ID(ON)
VGS=4.5V, VDS=5V
20
A
VGS=10V, ID=5.8A
22.5
28
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=4.5V, ID=5A
34.5
43
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
680
820
pF
Output Capacitance
COSS
102
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=15V, f=1.0MHz
77
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
4.6
6.5
ns
Turn-ON Rise Time
tR
3.8
5.7
ns
Turn-OFF Delay Time
tD(OFF)
20.9
30
ns
Turn-OFF Fall Time
tF
VDS=15V, VGS=10V, RG=3Ω,
RD=2.7Ω
5
7.5
ns
Total Gate Charge (Note 2)
QG
13.88
17
nC
Gate-Source Charge
QGS
1.8
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=5.8A
3.12
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A
0.76
1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.5
A
Reverse Recovery Time
tRR
16.1
21
ns
Reverse Recovery Charge
QRR
IF=5.8A, dI/dt=100A/μs
7.4
10
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.



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