UK3019G-AE2-R datasheet(1/3 Pages) UTC

No. de pieza	UK3019G-AE2-R

Descripción Electrónicos	2.5V DRIVE SILICON N-CHANNEL MOSFET

PDF	3 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UK3019

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-311.b

2.5V DRIVE SILICON

N-CHANNEL MOSFET

DESCRIPTION

The UTC UK3019 is a silicon N-channel MOSFET which has

been designed to minimize on-state resistance while it provides

rugged, reliable and fast switching performance. The product is

particularly suited for low voltage, low current applications such

as small servo motor controller, power MOSFET gate drivers, and

other switching applications.

FEATURES

* Min VDSS =30V

* RDS(ON) =5Ω(VGS=4V)

* RDS(ON) =7Ω(VGS=2.5V)

* Pulsed ID=400mA

* Low Voltage Drive (2.5V)

SYMBOL

SOT-23-3

1

2

3

(JEDEC TO-236)

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UK3019G-AE2-R

SOT-23-3

S

G

D

Tape Reel

MARKING

Número de pieza similar - UK3019G-AE2-R

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Unisonic Technologies	UK3018	147Kb / 3P	2.5V DRIVE SILICON N-CHANNEL MOSFET
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Descripción similar - UK3019G-AE2-R

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	ZXMN3B14F	222Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE JANUARY 2006
Unisonic Technologies	UK3018	147Kb / 3P	2.5V DRIVE SILICON N-CHANNEL MOSFET
Diodes Incorporated	ZXMN3B01F	475Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE DECEMBER 2005
Unisonic Technologies	UK3018BW	138Kb / 3P	DRIVE SILICON N-CHANNEL MOSFET
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UK3019G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies

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