UF740

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-078,E

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Internal Drain Inductance

Measured From the

Contact Screw on

Tab to Center of

Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

3.5

nH

Measured From the

Drain Lead, 6mm

(0.25in) From

Package to Center

of Die

4.5

nH

Internal Source Inductance

Measured From the

Source Lead, 6mm

(0.25in) From

Header to Source

Bonding Pad

7.5

nH

SOURCE TO DRAIN DIODE SPECIFICATIONS

Source to Drain Diode Voltage

2.0

V

Continuous

Source

to

Drain

Current

Modified MOSFET

Symbol Showing

the Integral Reverse

P-N Junction Diode

10

A

Pulse Source to Drain Current

(Note 2)

40

A

Reverse Recovery Time

170

390

790

ns

Reverse Recovery Charge

1.6

4.5

8.2

μC

Notes:

1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.

2. Repetitive rating: Pulse width limited by maximum junction temperature.