UDN302L-AE3-R datasheet(1/4 Pages) UTC

No. de pieza	UDN302L-AE3-R

Descripción Electrónicos	P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET

PDF	4 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UDN302

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-278.B

P-CHANNEL 2.5V SPECIFIED

POWERTRENCH MOSFET

DESCRIPTION

The UDN302 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON)=55mΩ @ VGS=-4.5V

* RDS(ON)=80mΩ @ VGS=-2.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UDN302L-AE3-R

UDN302G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

NC03

L: Lead Free

G: Halogen Free

Número de pieza similar - UDN302L-AE3-R

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Unisonic Technologies	UDN302L-AE3-R	206Kb / 4P	P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET
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UDN302L-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies

UDN302L-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies

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