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7N10G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

No. de pieza 7N10G-TN3-R
Descripción Electrónicos  7A, 100V N-CHANNEL POWER MOSFET
PDF  6 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

7N10G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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7N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-394.F
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=80V, ID=7.3A
(Note 1,2)
5.8
7.5
nC
Gate Source Charge
QGS
1.4
nC
Gate Drain Charge
QGD
2.5
nC
Turn-ON Delay Time
tD(ON)
VDD=50V, ID=7.3A, RG=25Ω
(Note 1,2)
7
25
ns
Turn-ON Rise Time
tR
24
60
ns
Turn-OFF Delay Time
tD(OFF)
13
35
ns
Turn-OFF Fall-Time
tF
19
50
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
7
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
16
A
Drain-Source Diode Forward Voltage
VSD
IS =7A, VGS =0V
1.5
V
Reverse Recovery Time
trr
VGS=0V, IS=7.3A,
diF/dt=100A/µs
70
ns
Reverse Recovery Charge
QRR
150
nC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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