5N50G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

5N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-476.e

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

±30

Drain Current

Continuous

Pulsed (Note 2)

IDM

Avalanche Current (Note 2)

IAR

Avalanche Energy

Single Pulsed (Note 3)

EAS

300

Repetitive (Note 2)

EAR

7.3

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F

TO-252

TO-262

125

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

θJA

62.5

°C/W

TO-252

110

°C/W

TO-262

62.5

°C/W

Junction to Case

TO-220F

θJC

3.25

°C/W

TO-252

2.13

°C/W

TO-262

°C/W

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