1N65AL-T92-R datasheet(3/8 Pages) UTC

3 / 8 page

1N65A

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-584.B

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 20V, VDS = 0V

100

Reverse

VGS = -20V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS/T

△ J ID =250mA,referenced to 25°C

0.4

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 0.5A

11.5 15.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V,

f=1MHz

100

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD (ON)

VDD=325V, ID=0.5A,

RG=5Ω (Note 1,2)

Turn-On Rise Time

Turn-Off Delay Time

tD (OFF)

Turn-Off Fall Time

Total Gate Charge

VDS=520V, VGS=10V,

ID=0.8A (Note 1,2)

Gate-Source Charge

QGS

1.8

Gate-Drain Charge

QGD

4.0

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, ISD = 1.2A

1.6

Maximum Continuous Drain-Source Diode

Forward Current

1.2

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

4.8

Reverse Recovery Time

trr

VGS=0V, ISD = 1.2A

di/dt = 100A/μs

136

Reverse Recovery Charge

QRR

0.3

μC

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature.

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