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TG430 Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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TG430 Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page  Product specification 500V N-Channel MOSFET TG430 Parameter l Value Unit Drain-Source Voltage V DSS 500 V Drain Current - Continuous I D 4.5 A Drain Current - Pulsed I DM 18 A Gate-Source Voltage V GSS ±30 V Power Dissipation P D 85 W Max. Operating Junction Temperature T j 150 oC Storage Temperature T stg -55~150 oC DESCRIPTION Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID =250μA 500 — — V Zero Gate Voltage Drain Current I DSS V DS =500V, VGS =0V — — 1.0 uA Gate-Body Leakage Current, Forward I GSSF V GS =30V, VDS =0V — — 100 nA Gate-Body Leakage Current, Reverse I GSSR V GS = -30V, VDS =0V — — -100 nA Gate Threshold Voltage V GS(th) V DS = VGS , ID =250μA 3.0 — 5.0 V Static Drain-Source On-Resistance R DS(on) V GS = 10 V, ID = 2.25 A — 1.36 1.8 W Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 4.5 A — — 1.4 V These N-Channel enhancement mode power field effect ’ transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O ( Ta = 25 C) O TO-252 TIGER ELECTRONIC CO., LTD. T G S |
Número de pieza similar - TG430 |
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Descripción similar - TG430 |
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