SSF7400 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSF7400

30V , 1.7A , RDS(ON) 85mΩ

N-Ch Enhancement Mode Power MOSFET

25-Aug-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250μA

Gate-Threshold Voltage

VGS(th)

0.6

1.4

VDS=VGS, ID=250μA

Gate-Body Leakage Current

IGSS

±100

VGS=±12V

VDS=30V, VGS=0

Drain-Source Leakage Current

IDSS

μA

VDS=24V, VGS=0

VGS=10V, ID=1.5A

100

VGS=4.5V, ID=1.5A

Drain-Source On-Resistance

RDS(ON)

140

mΩ

VGS=2.5V, ID=1A

Forward Transconductance

gfs

VDS=5V, ID=1.5A

Dynamic

Total Gate Charge

4.82

Gate-Source Charge

Qgs

0.62

Gate-Drain (“Miller”) Change

Qgd

1.58

VDS=15V,

VGS=4.5V,

ID=1.7A

Turn-on Delay Time

Td(on)

2.5

Rise Time

2.3

Turn-off Delay Time

Td(off)

Fall Time

VDS=15V,

VGS=10V,

RG=3Ω,

RL=10Ω,

Input Capacitance

Ciss

390

Output Capacitance

Coss

54.4

Reverse Transfer Capacitance

Crss

VGS=0,

VDS=15V,

f=1.0MHz

Gate Resistance

Ω

f=1.0MHz

Source-Drain Diode

Continuous Source Current

(Body Diode)

0.5

VG=VD=0, VS=1V

Diode Forward Voltage

VSD

IS=1A, VGS=0

Reverse Recovery Time

TRR

Reverse Recovery Charge

QRR

3.6

IS=1.7A, VGS=0

dI/dt=100A/μs

Notes:

1. Pulse width≦300us, duty cycle≦2%.

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