SMS840

Ω

Ω

Ω

P-Channel Enhancement MOSFET

Elektronische Bauelemente

25-Nov-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static Characteristics

1

Drain-Source Breakdown Voltage

-50

-

-

V

Zero Gate Voltage Drain Current

-

-

-0.1

µA

-

-

-15

Gate-Source Leakage Current

-

-

±60

µA

Gate-Source Threshold Voltage

-0.8

-

-2

V

Static Drain-Source On Resistance

-

5

10

Forward Transconductance

50

-

-

mS

Dynamic Characteristics

Input Capacitance

-

30

-

pF

Output Capacitance

-

10

-

Reverse Transfer Capacitance

-

5

-

Switching Characteristics

2

Turn-On Delay Time

-

25

-

nS

Turn-Off Delay Time

-

16

-

Rise Time

-

1

-

Fall Time

-

8

-

Gate Charge

-

6000

-

pC

Source-Drain Diode Characteristics

Continuous Current

-

-

0.13

A

Pulsed Current

-

-

0.52

Forward Voltage

2

-

-2.5

-

V

Notes:

1.

Pulse Test : PW≤300us, Duty Cycle≤2%.

2.

Switching Time is Essentially Independent of Operating Temperature.