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SWD2N60 Datasheet(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

No. de pieza SWD2N60
Descripción Electrónicos  N-channel MOSFET (TO-251 , TO-252)
PDF  7 Pages
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Fabricante Electrónico  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Página de inicio  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SWD2N60 Datasheet(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*. Notes :
1. V
GS
= 0V
2. I
D
= 250uA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*. Notes :
1. V
GS
= 10V
2. I
D
= 2.0A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
*. Notes :
1. T
C
= 25
OC
2. T
J
= 150
OC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
t
1
t
2
*. Notes :
1. Z
¥èJC
(t) = 2.58
OC/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
SW2N60
SAMWIN
4/7



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