Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 37nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220F

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

10.0

10.0*

A

Continuous Drain Current (@T

6.0

6.0*

A

I

DM

Drain current pulsed

(note 1)

40

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

745

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

15.6

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

156

50*

W

1.25

0.4

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220F

R

thjc

Thermal resistance, Junction to case

0.8

2.5

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

*. Drain current is limited by junction temperature.

BV

I

D

: 10.0A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

TO-220F

1

2

3

TO-220

SW10N60

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 10N60

SW10N60

TO-220

TUBE

2

SW F 10N60

SW10N60

TO-220F

TUBE

Order Codes