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Features

■ High ruggedness

■ R

■ Gate Charge (Max 7nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

800

V

I

D

Continuous Drain Current (@T

1.0

A

Continuous Drain Current (@T

0.6

A

I

DM

Drain current pulsed

(note 1)

3.0

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

50

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

0.3

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

3

W

0.023

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thCS

Thermal resistance, Junction to Lead Max

40

R

thjA

Thermal resistance, Junction to ambient

120

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 1.0A

R

1

2

3

SW1N80A

SAMWIN

1. Gate 2. Drain 3. Source

1

2

3

TO-92

Item

Sales Type

Marking

Package

Packaging

1

SW C 1N80A

SW1N80A

TO-92

TAPE

Order Codes