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ZXMP6A17G Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza ZXMP6A17G
Descripción Electrónicos  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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ZXMP6A17G Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXMP6A17G
Document Number DS33375 Rev. 2 - 2
4 of 8
www.diodes.com
August 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
⎯
⎯
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
⎯
⎯
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 6)
RDS (ON)
⎯
0.096
0.125
Ω
VGS = -10V, ID = -2.2A
0.120
0.190
VGS = -4.5V, ID = -1.8A
Forward Transconductance (Notes 6 & 7)
gfs
⎯
4.7
⎯
S
VDS = -15V, ID = -2.2A
Diode Forward Voltage (Note 6)
VSD
⎯
-0.85
-0.95
V
IS = -2.0A, VGS = 0V, TJ = 25°C
Reverse recovery time (Note 7)
trr
25.1
⎯
ns
IS = -1.7A, di/dt = 100A/μs,
TJ = 25°C
Reverse recovery charge (Note 7)
Qrr
⎯
27.2
⎯
nC
DYNAMIC CHARACTERISTICS (
Note 7)
Input Capacitance
Ciss
⎯
637
⎯
pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
⎯
70.0
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
53.0
⎯
pF
Total Gate Charge (Note 8)
Qg
⎯
9.0
⎯
nC
VGS = -4.5V
VDS = -30V
ID = -2.2A
Total Gate Charge (Note 8)
Qg
⎯
17.7
⎯
nC
VGS = -10V
Gate-Source Charge (Note 8)
Qgs
⎯
1.6
⎯
nC
Gate-Drain Charge (Note 8)
Qgd
⎯
4.4
⎯
nC
Turn-On Delay Time (Note 8)
tD(on)
⎯
2.6
⎯
ns
VDD = -30V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 8)
tr
⎯
3.4
⎯
ns
Turn-Off Delay Time (Note 8)
tD(off)
⎯
26.2
⎯
ns
Turn-Off Fall Time (Note 8)
tf
⎯
11.3
⎯
ns
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.



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