ZXMP6A17DN8

SEMICO NDUC TORS

ISSUE 1 - OCTOBER 2005

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a)(d)

100

°C/W

Junction to Ambient

(b)(e)

70

°C/W

Junction to Ambient

(b)(d)

60

°C/W

THERMAL RESISTANCE

Notes

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t

10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.

(d) For a dual device with one active die.

(e) For dual device with 2 active die running at equal power.

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

20

V

(b)(d)

(b)(d)

(a)(d)

-3.2

-2.5

-2.4

A

A

A

Pulsed Drain Current

(c)

-14.2

A

Continuous Source Current (Body Diode)

(b)

-3.0

A

Pulsed Source Current (Body Diode)

(c)

-14.2

A

Power Dissipation at TA=25°C

(a)(d)

Linear Derating Factor

1.25

10

W

mW/°C

Power Dissipation at TA=25°C

(a)(e)

Linear Derating Factor

1.81

14.5

W

mW/°C

Power Dissipation at TA=25°C

(b)(d)

Linear Derating Factor

2.15

17

W

mW/°C

Operating and Storage Temperature Range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS