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ZXMP6A16K Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza ZXMP6A16K
Descripción Electrónicos  60V DPAK P-channel enhancement mode MOSFET
PDF  8 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A16K Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXMP6A16K
Issue 3 - June 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
-60
V
Gate-source voltage
VGS
± 20
V
Continuous drain current
@ VGS= 10V; Tamb=25°C
(b)
ID
8.2
A
@ VGS= 10V; Tamb=70°C
(b)
6.5
@ VGS= 10V; Tamb=25°C
(a)
5.4
Pulsed drain current(c)
IDM
27.2
A
Continuous source current (body diode)(b)
IS
10
A
Pulsed source current (body diode)(c)
ISM
27.2
A
Power dissipation at Tamb =25°C
(a)
PD
4.24
W
Linear derating factor
33.9
mW/°C
Power dissipation at Tamb =25°C
(b)
PD
9.76
W
Linear derating factor
78
mW/°C
Power dissipation at Tamb =25°C
(d)
PD
2.11
W
Linear derating factor
16.8
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
29.45
°C/W
Junction to ambient(b)
R JA
12.8
°C/W
Junction to ambient(d)
R JA
59.1
°C/W



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