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ZXMD63P02XTC Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza ZXMD63P02XTC
Descripción Electrónicos  DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMD63P02XTC Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXMD63P02X
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
RθJA
143
°C/W
Junction to Ambient (b)(d)
RθJA
100
°C/W
Junction to Ambient (a)(e)
RθJA
120
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate- Source Voltage
VGS
± 12
V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d)
(VGS=4.5V; TA=70°C)(b)(d)
ID
-1.7
-1.35
A
Pulsed Drain Current (c)(d)
IDM
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
IS
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
ISM
-9.6
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
0.87
6.9
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.04
8.3
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ISSUE
1 - JUNE 2004



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