DMN2104L

Document number: DS31560 Rev. 1 - 2

2 of 4

www.diodes.com

October 2008

© Diodes Incorporated

DMN2104L

0

4

8

12

16

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 2.5V

GS

0

2

4

6

8

10

12

14

16

0.5

1

1.5

2

2.5

3

3.5

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

02

4

6

8

10

12

14

16

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V

= 4.5V

GS

V

= 10V

GS

V

= 2.5V

GS

0.02

0.04

0.06

0.08

0.1

04

8

12

16

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

V

= 4.5V

I = 5A

GS

D

V

= 10V

I = 10A

GS

D

0.4

0.6

0.8

1.0

1.2

1.4

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

I = 250µA

D

I = 1mA

D