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STP60NF10 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP60NF10 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page  STB60NF10 - STB60NF10 -1 - STP60NF10 Electrical ratings 3/15 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 80 A ID Drain current (continuous) at TC=100°C 66 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD ≤80A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX Peak diode recovery voltage slope 16 V/ns EAS (4) 4. Starting TJ = 25 oC, I D = 40A, VDD = 30V Single pulse avalanche energy 485 J Tstg Storage temperature -55 to 175 °C Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case max 0.5 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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