2STF2360 datasheet(3/11 Pages) STMICROELECTRONICS

No. de pieza	2STF2360

Descripción Electrónicos	Low voltage fast-switching PNP power transistors

PDF	11 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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2STD2360, 2STF2360, 2STN2360

Electrical characteristics

Doc ID 13309 Rev 5

3/11

Electrical characteristics

TCASE = 25°C; unless otherwise specified.

2.1

Typical characteristics (curves)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = - 60 V

-100

IEBO

Emitter cut-off current

(IC = 0)

VEB = - 6 V

-100

VBE(on)

Base-emitter on voltage

VCE = - 2 V

IC = - 100 mA -630

-650

-730

VCE(sat)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

saturation voltage

IC = - 2 A

IB = - 100 mA

IC = - 3 A _

IB = - 150 mA

-200

-300

-320

-500

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = - 2 A

_ IB = -100 mA

-0.9

-1.2

hFE

(1)

DC current gain

IC = - 100 mA_ VCE = - 2 V

IC = - 1 A

_ VCE = - 2 V

160

400

Resistive load

Delay time

Rise time

Storage time

Fall time

IC = - 3 A

VCC = - 10 V

IB(on) = - IB(off) = - 300 mA

VBE(off) = 5 V

250

100

350

Transition frequency

IC = - 0.1 A __ VCE = - 10 V

130

MHz

Figure 2.

DC current gain (VCE = - 2 V)

Figure 3.

DC current gain (VCE = - 5 V)

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