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STP3N150 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP3N150
Descripción Electrónicos  N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3N150 Datasheet(HTML) 3 Page - STMicroelectronics

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STFW3N150, STP3N150, STW3N150
Electrical ratings
Doc ID 13102 Rev 9
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220,TO-247
TO-3PF
VDS
Drain-source voltage (VGS = 0)
1500
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
2.5
2.5(1)
A
ID
Drain current (continuous) at TC = 100 °C
1.6
1.6 (1)
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
10
10 (1)
A
PTOT
Total dissipation at TC = 25 °C
140
63
W
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
3500
V
Derating factor
1.12
0.5
W/°C
Tstg
Storage temperature
-50 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
TO-220
TO-247
TO-3PF
Unit
Rthj-case Thermal resistance junction-case max
0.89
2
°C/W
Rthj-amb
Thermal resistance junction-ambient
max
62.5
50
50
°C/W
Tj
Maximum lead temperature for
soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
450
mJ



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