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STB85NF55L Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB85NF55L
Descripción Electrónicos  N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK STripFET™II Power MOSFET
PDF  14 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB85NF55L Datasheet(HTML) 3 Page - STMicroelectronics

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STB85NF55L, STP85NF55L
Electrical ratings
Doc ID 8544 Rev 8
3/14
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
55
V
VGS
Gate-source voltage
± 15
V
ID
(1)
1.
Current limited by package
Drain current (continuous) at TC = 25 °C
80
A
ID
(1)
Drain current (continuous) at TC=100 °C
80
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
300
W
Derating factor
2.0
W/°C
dv/dt (3)
3.
ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Peak diode recovery voltage slope
10
V/ns
EAS
(4)
4.
Starting TJ = 25 °C, ID = 40 A, VDD = 40 V
Single pulse avalanche energy
980
mJ
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220
Rthj-case Thermal resistance junction-case max.
0.5
°C/W
Rthj-amb Thermal resistance junction-ambient max.
62.5
°C/W
Rthj-pcb Thermal resistance junction-pcb max.
(1)
1.
When mounted on 1inch² FR-4 2Oz Cu board
35
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C



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