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SMS1A Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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SMS1A Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() SMS1A - SMS1M SURFACE MOUNT SUPER FAST RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Super fast recovery time * Pb Free / RoHS Compliant MECHANICAL DATA : * Case: JEDEC SOD-123FL, molded plastic over passivated chip * Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026 * Polarity: Color band denotes cathode end * Mounting position : Any * Weight: 0.02 gram (Approximate) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SMS1A SMS1B SMS1D SMS1G SMS1J SMS1K SMS1M UNIT Marking SA SB SD SG SJ SK SM Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Ta = 55 °C IF(AV) A Maximum Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A VF V Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time ( Note 1 ) Trr 35 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pF Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : January 12, 2009 RATING 4.0 1.7 IR 5.0 10 0.95 μA IFSM 30 A Dimensions in millimeters SOD-123FL 2.5(0.098) 2.9(0.114) 3.5(0.138) 3.9(0.154) 0.5(0.020) 1.1(0.043) max0.1(0.004) IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
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