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TDF8591TH Datasheet(PDF) 26 Page - NXP Semiconductors

No. de pieza TDF8591TH
Descripción Electrónicos  2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier
PDF  34 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8591TH Datasheet(HTML) 26 Page - NXP Semiconductors

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TDF8591TH_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2008
26 of 34
NXP Semiconductors
TDF8591TH
2
× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier
(1) ripple on VDD only.
(2) ripple in antiphase.
(3) ripple on VSS only.
(4) ripple in phase.
(1) ripple on VSS only.
(2) ripple on VDD only.
(3) ripple in antiphase.
(4) ripple in phase.
a. SE application; RL =4 Ω
b. BTL application; RL =8 Ω
Fig 24. Supply voltage ripple rejection as a function of frequency; Mute mode
001aah213
40
20
60
80
SVRR
(dB)
0
(2)
(4)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1
(2)
(4)
(1)
(3)
001aah214
40
60
80
SVRR
(dB)
20
f (kHz)
10−2
102
10
10−1
1
(1) ripple on VDD only.
(2) ripple in antiphase.
(3) ripple on VSS only.
(4) ripple in phase.
(1) ripple in phase.
(2) ripple on VSS only.
(3) ripple on VDD only.
(4) ripple in antiphase.
a. SE application; RL =4 Ω
b. BTL application; RL =8 Ω
Fig 25. Supply voltage ripple rejection as a function of frequency; Operating mode
001aah215
40
20
60
80
SVRR
(dB)
0
(2)
(4)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1
001aah216
40
60
80
SVRR
(dB)
20
(1)
(2)
(3)
(4)
f (kHz)
10−2
102
10
10−1
1



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