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TDF8591TH Datasheet(PDF) 25 Page - NXP Semiconductors

No. de pieza TDF8591TH
Descripción Electrónicos  2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier
PDF  34 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8591TH Datasheet(HTML) 25 Page - NXP Semiconductors

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TDF8591TH_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2008
25 of 34
NXP Semiconductors
TDF8591TH
2
× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier
(1) VP = ±14 V.
(2) VP = ±27 V and ±29 V.
Fig 22. Common mode rejection ratio as a function of frequency; BTL application
001aah210
60
100
CMRR
(dB)
20
(2)
(1)
f (kHz)
10−2
102
10
10−1
1
(1) ripple in antiphase.
(2) ripple on VDD only.
(3) ripple on VSS only.
(4) ripple in phase.
(1) ripple on VSS only.
(2) ripple on VDD only.
(3) ripple in phase.
(4) ripple in antiphase.
a. SE application; RL =4 Ω
b. BTL application; RL =8 Ω
Fig 23. Supply voltage ripple rejection as a function of frequency; Standby mode
001aah211
80
100
120
SVRR
(dB)
60
(2)
(4)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1
001aah212
80
100
120
SVRR
(dB)
60
(2)
(4)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1



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