IXFT18N90P datasheet(1/5 Pages) IXYS

No. de pieza	IXFT18N90P

Descripción Electrónicos	Polar Power MOSFET HiPerFET

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Fabricante Electrónico	IXYS [IXYS Corporation]

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DS100057A(9/09)

V

DSS

= 900V

I

D25

= 18A

R

DS(on)

≤≤≤≤≤ 600mΩ

Ω

t

rr

≤≤≤≤≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C18

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

36

A

I

A

T

C = 25°C9

A

E

AS

T

C = 25°C

800

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

15

V/ns

P

D

T

C = 25°C

540

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

F

C

Mounting Force (PLUS220)

11..65/2.5..14.6

N/lb.

Weight

TO-247

6

g

TO-268

4

g

PLUS220 types

4

g

IXFH18N90P

IXFT18N90P

IXFV18N90P

IXFV18N90PS

PolarTM Power MOSFET

HiPerFETTM

Features

International Standard Packages

Avalanche Rated

Low Package Inductance

Fast Intrinsic Diode

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

6.0

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 125°C

1.5 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

600 m

Ω

G = Gate

D

= Drain

S = Source

TAB = Drain

PLUS220SMD (IXFV_S)

G

S

D (TAB)

PLUS220 (IXFV)

G

D

S

D (TAB)

TO-268 (IXFT)

TO-247 (IXFH)

D (TAB)

G

D

S

G

S

D (TAB)

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