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PIC16F688 Datasheet(PDF) 83 Page - Microchip Technology |
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PIC16F688 Datasheet(HTML) 83 Page - Microchip Technology |
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83 / 204 page ![]() © 2009 Microchip Technology Inc. DS41203E-page 81 PIC16F688 9.1.4 READING THE FLASH PROGRAM MEMORY To read a program memory location, the user must write two bytes of the address to the EEADR and EEADRH registers, set the EEPGD control bit of the EECON1 register, and then set control bit RD of the EECON1 register. Once the read control bit is set, the program memory Flash controller will use the second instruction cycle to read the data. This causes the sec- ond instruction immediately following the “BSF EECON1,RD ” instruction to be ignored. The data is available in the very next cycle, in the EEDAT and EEDATH registers; therefore, it can be read as two bytes in the following instructions. EEDAT and EEDATH registers will hold this value until another read or until it is written to by the user (during a write operation). EXAMPLE 9-3: FLASH PROGRAM READ Note 1: The two instructions following a program memory read are required to be NOP’s. This prevents the user from executing a two-cycle instruction on the next instruction after the RD bit is set. 2: If the WR bit is set when EEPGD = 1, it will be immediately reset to ‘0’ and no operation will take place. BANKSEL EEADR ; MOVLW MS_PROG_EE_ADDR ; MOVWF EEADRH ;MS Byte of Program Address to read MOVLW LS_PROG_EE_ADDR ; MOVWF EEADR ;LS Byte of Program Address to read BANKSEL EECON1 ; BSF EECON1, EEPGD ;Point to PROGRAM memory BSF EECON1, RD ;EE Read ; ;First instruction after BSF EECON1,RD executes normally NOP NOP ;Any instructions here are ignored as program ;memory is read in second cycle after BSF EECON1,RD ; BANKSEL EEDAT ; MOVF EEDAT, W ;W = LS Byte of Program Memory MOVWF LOWPMBYTE ; MOVF EEDATH, W ;W = MS Byte of Program EEDAT MOVWF HIGHPMBYTE ; BCF STATUS, RP1 ;Bank 0 |
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