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HFS50N06 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS50N06 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,July 2005 V DS, Drain-Source Voltage [V] V GS, Gate-Source Voltage [V] Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics I D, Drain Current [A] V SD, Source-Drain Voltage [V] 0 10 20 30 40 50 0 2 4 6 8 10 12 V DS = 30V V DS = 48V ※ Note : I D = 30 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] |
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