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HFS5N65S Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.

No. de pieza HFS5N65S
Descripción Electrónicos  650V N-Channel MOSFET
PDF  7 Pages
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Fabricante Electrónico  SEMIHOW [SemiHow Co.,Ltd.]
Página de inicio  http://www.semihow.com
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HFS5N65S Datasheet(HTML) 3 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,Oct 2009
V
DS, Drain-Source Voltage [V]
Typical Characteristics
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
25
oC
150
oC
* Note :
1. V
GS = 0V
2. 250
µs Pulse Test
V
SD , Source-Drain Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
* Note
1. V
DS = 50V
2. 250
µs Pulse Test
-55
oC
150
oC
25
oC
V
GS , Gate-Source Voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
* Note ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
0
2
4
6
8
10
0
1
2
3
4
5
6
* Note : T
J = 25
oC
V
GS = 20V
V
GS = 10V
I
D , Drain Current [A]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Q
G, Total Gate Charge [nC]
* Note : I
D = 4.2A
V
DS = 325V
V
DS = 130V
V
DS = 520V



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