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HFS4N65 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS4N65 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,April 2006 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 900 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 2 4 6 8 10 12 14 1 2 3 4 5 6 7 8 ※ Note : T J = 25 ℃ V GS = 20V V GS = 10V I D , Drain Current [A] 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V ※ Note : I D = 3.6A Q G, Total Gate Charge [nC] |
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