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HFS4N60 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS4N60 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,July 2005 V DS, Drain-Source Voltage [V] 101 100 10-1 10-1 100 101 ※ Note : 1. 250㎲ Pulse Test 2. TC=25℃ V Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottem 5.0V ※ Note : 1. VDS=40V 2. 250㎲ Pulse Test 150℃ 25℃ -55℃ 101 100 10-1 2 4 6 8 10 V SD, Source-Drain Voltage [V] ※ Note : 1. VGS=0V 2. 250㎲ Pulse Test 150℃ 25℃ 0.2 0.4 0.6 0.8 1.0 1.2 1.4 101 100 10-1 V GS, Gate-Source Voltage [V] I D, Drain Current [A] 12 10 8 6 4 2 0 0 2 4 6 8 10 12 V GS=20V V GS=10V ※ Note : T J=25℃ Typical Characteristics 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 Q G, Total Gate Charge [nC] * Note : I D = 4A V DS = 300V V DS = 120V V DS = 480V Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] |
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