HFS4N50 datasheet(3/7 Pages) SEMIHOW

No. de pieza	HFS4N50

Descripción Electrónicos	500V N-Channel MOSFET

PDF	7 Pages

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Fabricante Electrónico	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,July 2005

D, Drain Current [A]

SD, Source-Drain Voltage [V]

GS, Gate-Source Voltage [V]

DS, Drain-Source Voltage [V]

Typical Characteristics

-1

100

200

300

400

500

600

700

800

900

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 250V

DS = 100V

DS = 400V

※ Note : I

D = 3.4A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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