TPS62060 datasheet(3/21 Pages) TI

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TPS62060

www.ti.com

SLVSA95 – MARCH 2010

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

AVIN ,

Supply voltage

2.7

PVIN

Output current capability

1600

Output voltage range for adjustable voltage

0.8

VIN

Effective Inductance Range

0.7

1.0

1.6

µH

COUT

Effective Output Capacitance Range

4.5

µF

Operating ambient temperature(1)

–40

°C

Operating junction temperature

–40

125

°C

(1)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the

maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the

part/package in the application (qJA), as given by the following equation: TA(max)= TJ(max)–(qJA X PD(max))

ELECTRICAL CHARACTERISTICS

Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply

for condition VIN = EN = 3.6V. External components CIN = 10mF 0603, COUT = 10mF 0603, L = 1.0mH, see the parameter

measurement information.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY

VIN

Input voltage range

2.7

IOUT = 0 mA, device operating in PFM mode

Operating quiescent current

and not device not switching

ISD

Shutdown current

EN = GND, current into AVIN and PVIN

0.1

Falling

1.73

1.78

1.83

VUVLO

Undervoltage lockout threshold

Rising

1.9

1.95

1.99

ENABLE, MODE

VIH

High level input voltage

2.7 V

≤ VIN ≤ 6 V

1.0

VIL

Low level input voltage

2.7 V

≤ VIN ≤ 6 V

0.4

IIN

Input bias current

Pin tied to GND or VIN

0.01

POWER SWITCH

VIN = 3.6 V

(1)

120

180

RDS(on)

High-side MOSFET on-resistance

Ω

VIN = 5.0 V

(1)

150

VIN = 3.6 V

(1)

130

RDS(on)

Low-side MOSFET on-resistance

VIN = 5.0 V

(1)

100

Forward current limit MOSFET

ILIMF

2.7V

≤ VIN ≤ 6 V

1800

2250

2700

high-side and low-side

Thermal shutdown

Increasing junction temperature

150

TSD

°C

Thermal shutdown hysteresis

Decreasing junction temperature

OSCILLATOR

fSW

Oscillator frequency

2.7 V

≤ VIN ≤ 6 V

2.6

3.4

MHz

(1)

Maximum value applies for TJ = 85°C

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